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Semiconductors. Modern solutions in integrated circuits - Chenming Calvin Hu

Semiconductors. Modern solutions in integrated circuits - Chenming Calvin Hu

Index: KSZ-06323 EAN: 9788328320901
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Translation: Konrad Matuk. Publisher: Helion. The book contains useful knowledge about transistors and circuit design using these revolutionary electronic components.

Semiconductors. Modern solutions in integrated circuits - Chenming Calvin Hu
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Description

The book contains useful knowledge about transistors and circuit design using these revolutionary electronic components. The book is primarily aimed at students of technical faculties, however, doctoral students, engineers and scientists are also willing to use it.

The author presents an in-depth analysis of issues related to basic components of electronic circuits. It presents the principles of operation of such devices as photovoltaic cells, LEDs, laser diodes, etc. The book allows to understand the rules and regulations and to master practical knowledge in the field of electronics, which is also the basis for other technical fields, such as computer science.

The book contains:

  • introduction to semiconductor issues including recombination of electrons and electron holes
  • description of semiconductor component manufacturing technology;
  • the principle of p-n connector and metal-semiconductor connector;
  • information on MOS transistors and CCD and CMOS matrices;
  • knowledge of MOFSET transistors, SRAMs and DRAMs and Flash memory;
  • description of bipolar transistors

A fragment of a book toread on-line.

Table of contents

Preface (11)
About the author (13)

1. semiconductors: electrons and holes in semiconductors (15)

  • 1.1 Crystalline structure of silicon (16)
  • 1.2 The electron and hole bond model (18)
  • 1.3. Energy-band model (22)
  • 1.4 Semiconductors, isolators and conductors (27)
  • 1.5 Electrons and holes (29)
  • 1.6 Density of states (32)
  • 1.7 Thermal balance and function of the farm (33)
  • 1.8 Concentrations of electrons and holes (37)
  • 1.9. General issues concerning parameters n/a (43)
  • 1.10. Media concentrations at very low and very high temperatures (47)
  • 1.11. Summary of Chapter (47)
  • Tasks (49)
  • Bibliography (54)
  • Publications generally related to the subject matter of the chapter (55)

2. motion and recombination of electrons and holes (57)

  • 2.1 Heat movement (57)
  • 2.2 Drift (60)
  • 2.3 Diffusion current (69)
  • 2.4 Relationship between the energy level diagram and the voltage and field
  • electric (71)
  • 2.5 Einstein's relationship between D and ( (71)
  • 2.6 Recombination of an electronic device (74)
  • 2.7. Thermal generation (77)
  • 2.8 QuasiFermistry balance and levels (77)
  • 2.9. Summary of Chapter (79)
  • Tasks (81)
  • Bibliography (84)
  • Publications generally related to the subject matter of the chapter (84)

3. semiconductor component manufacturing technology (85)

  • 3.1 Introduction to component manufacturing (86)
  • 3.2 Oxidation of silicon (88)
  • 3.3 Lithography (89)3.4. Transfer of etching patterns (96)
  • 3.5 Semiconductor admixture (99)
  • 3.6 Diffusion of admixtures (101)
  • 3.7 Thin layer deposition (105)
  • 3.8 The process of creating joints between components (110)
  • 3.9. Testing, assembly and qualification (113)
  • 3.10. Chapter Summary Example of Component Production Process (114)
  • Tasks (116)
  • Bibliography (120)
  • Publications generally related to the subject matter of the chapter (121)

4. pn connector and metal-semiconductor connector (123)

  • Part I. Connector N (123)
    • 4.1 Theoretical issues related to the joint pn (124)
    • 4.2 Depleted layer model (128)
    • 4.3 N and barrier polarity (133)
    • 4.4 Capacity-voltage characteristics (134)
    • 4.5 Breakthrough of the N (136) connector
    • 4.6 Injection of carriers in conduction polarisation and quasi-surface conditions
    • coastal (141)
    • 4.7 The current continuity equation (144)
    • 4.8 Redundant carriers in the conduction polarisation (146)
    • 4.9 Current-voltage characteristics of a semiconductor diode (150)
    • 4.10. Storage of cargo (154)
    • 4.11. Small signal model diode (155)
  • Part II. Application in optoelectronic components (156)
    • 4.12. Photovoltaic cells (156)
    • 4.13. Light emitting diodes and solid state lighting (164)
    • 4.14. Laser diodes (170)
    • 4.15. Photodiodes (175)
  • Part III. Metal semiconductor connector (176)
    • 4.16. Schottky's barrier (176)
    • 4.17. Theory of thermoelectron emission (181)
    • 4.18. Schottky diodes (182)
    • 4.19. Use of Schottky diodes (184)
    • 4.20. Mechanical quantum tunneling (186)
    • 4.21. Ohmic contact (186)
    • 4.22. Summary of Chapter (190)
    • Tasks (194)
    • Bibliography (204)
    • Publications generally related to the subject matter of the chapter (205)


5th MOS capacitor (207)

  • 5.1 Condition and voltage of the flat band (208)
  • 5.2 Surface accumulation (210)
  • 5.3 Area depletion (212)
  • 5.4 Threshold condition and threshold voltage (213)
  • 5.5 Strong inversion beyond threshold conditions (216)
  • 5.6 Capacity-voltage characteristics of the MOS capacitor (220)
  • 5.7 Oxide charge affecting Ufb and Ut (225)
  • 5.8. Depletion of the polysilicon gate due to T228 growth
  • 5.9 Thickness and quantum mechanical effect of inversion and accumulation layers (230)
  • 5.10. CCD and CMOS matrix (233)
  • 5.11. Chapter Summary (240)
  • Tasks (243)
  • Bibliography (252)
  • Publications generally related to the topic of the chapter (252)


6. MOS Transistor (253)

  • 6.1 MOSFET transistors introduction (253)
  • 6.2 Complementary structure MOS (CMOS technology) (254)
  • 6.3 Surface motions and FET systems characterised by high mobility (260)
  • 6.4 Ut voltage, substrate effect and MOSFET (267) doping
  • 6.5 The Qinw parameter characterising MOSFET transistors (271)
  • 6.6 Basic current-voltage model of the MOSFET transistor (272)
  • 6.7 Example of a system: CMOS inverter (276)
  • 6.8 Speed saturation (282)
  • 6.9. MOSFET current-voltage transistor model taking into account speed saturation (284)
  • 6.10. Parasitic resistance of the source of the Drain (289)
  • 6.11. Series resistance and effective channel length extraction (290)
  • 6.12. Source over speeding and speed limit (293)
  • 6.13. Output conductance (295)
  • 6.14. Performance at high frequencies (296)
  • 6.15. Interference with MOSFET transistors (299)
  • 6.16. SRAM, DRAM and non-volatile flash memory bones (305)
  • 6.17. Summary of Chapter (314)
  • Tasks (318)
  • Bibliography (330)
  • Publications generally related to the topic of the chapter (331)


7. MOSFET transistors in integrated circuits scale change, leakage current and other issues (333)

  • 7.1 Change in the scale of technology reduction of production costs, increase in speed, decrease in power consumption (334)
  • 7.2. Sub-threshold current 'off' does not mean 'completely off'. (338)
  • 7.3 Ut voltage gain drop MOSFET transistors with short channels have a higher leakage current (342)
  • 7.4 Reduction of the electrical insulation thickness of the gate and tunnel leakage (347)
  • 7.5 Reduction of parameter Wzub (349)
  • 7.6 Shallow interface and MOSFETs with metal sources and drains (352)
  • 7.7 Compromise between Italy and Italy and design for production capacity (354)
  • 7.8 MOSFET transistors with very thin bodies and multiple gates (357)
  • 7.9 Output conductance (362)
  • 7.10. Simulation of processes and components (364)
  • 7.11. MOSFET compact transistor model used to simulate circuit operation (365)
  • 7.12. Summary of Chapter (366)
  • Tasks (368)
  • Bibliography (371)
  • Publications generally related to the topic of the chapter (372)


8. bipolar transistor (373)

  • 8.1 Introduction to BJT transistors (374)
  • 8.2 Collector current (376)
  • 8.3 Base current (380)
  • 8.4 Current amplification (381)
  • 8.5 Base width modulation with collector voltage (386)
  • 8.6 EbersaMoll model (389)
  • 8.7. Descent time and storage of cargo (392)
  • 8.8 Small signal model (396)
  • 8.9 Limit frequency (399)
  • 8.10. Current controlled model (400)
  • 8.11. Model for high signal simulation of circuit operation (404)
  • 8.12. Summary of Chapter (406)
  • Tasks (408)
  • Bibliography (414)
  • Publications generally related to the topic of the chapter (414)


Appendix A

  • Bringing out the formulae for state density (415)

Appendix B

  • Performance of the decomposition function of the Fermie-Dirac (419)

Appendix C

  • Self-reconciliation of assumptions concerning minority carriers (423)
  • Answers to selected tasks (427)

Scorch (433)
Book - Author Chenming Calvin Hu
Book - ISBN 978-83-283-2090-1
Book - Binding miękka
Book - Publisher Helion
Package width 0.001 cm
Package height 0.001 cm
Package depth 0.001 cm
Package weight 0.001 kg
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