In the category of “Memory FRAM”, the proposed memory modules are non-volatile FRAM. They are characterized by very low power consumption and very high strength. Available modules with a capacity of 64 Kbit (8 KB) with communications using the bus SPI and those whose capacity reaches 256 KB (32 KB), and the connection through the interface I2C. This type of memory is most often used to store BIOS settings.
Module with non-volatile FRAM memory for data storage which is characterized by low power consumption and very high durability. The system capacity is 256 KB (32 KB), it communicates through the I2C bus.
FRAM memory (English - ferroelectric random-access memory) is ferroelektryczna memory random access. FRAM is non-volatile memory - this means that this type of memory does not lose data even after sudden power loss. For this reason, they are used primarily for storing the most important information, providing stable operation of the computers - saving settings (e.g., BIOS). This type of storage device allows the addressing, writing and reading of individual words. A great advantage of such solutions is the ability to modify parts of a record, without needing to delete whole blocks of memory (e.g., flash memory). FRAM memory is characterized by very low energy consumption, very high speed (the government billions of dollars in a few seconds), long lifespan (about a trillion in biliarda number of cycles) and high strength preservation over a long period of time - about a hundred years.
In stock category “FRAM Memory”, we offer our customers modules with non-volatile FRAM memory with a capacity of 64 Kbit (8 KB) with communications using the SPI module with four times more memory - 256 KB (32 KB), where communication is done via I2C interface. Conclusions in both systems, the operation requires the current supply with a voltage of 3.3 V or 5 V (fluent). The tile size is 15.5 mm x 20 mm x 2 mm insights ready for self-Assembly of goldpin connectors (straps included with the device) - terminal pitch is 2.54 mm.